@Article{BarrosAbraRapp:2006:ElOpPr,
               author = "Barros, A. S. and Abramof, Eduardo and Rappl, Paulo Henrique de 
                         Oliveira",
          affiliation = "Instituto Nacional de Pesquisas Espaciais, Laborat{\'o}rio 
                         Associado de Sensores e Materiais, (INPE, LAS) and Instituto 
                         Nacional de Pesquisas Espaciais, Laborat{\'o}rio Associado de 
                         Sensores e Materiais, (INPE, LAS) and Instituto Nacional de 
                         Pesquisas Espaciais, Laborat{\'o}rio Associado de Sensores e 
                         Materiais, (INPE, LAS)",
                title = "Electrical and optical properties of PbTe p-n junction infrared 
                         sensors",
              journal = "Journal of Applied Physics",
                 year = "2006",
               volume = "99",
               number = "024904",
                month = "Jan",
             keywords = "LEAD-CHALCOGENIDE, SILICON, ARRAYS, DETECTORS.",
             abstract = "Lead telluride mesa diodes were fabricated from a series of p-n 
                         junctions grown on 111 BaF2 substrates, in which the hole 
                         concentration p was kept constant at 1017 cm\−3 and the 
                         electron concentration n varied between 1017 and 1019 
                         cm\−3. Capacitance-voltage analysis showed that for n1018 
                         cm\−3 the PbTe p-n junction is one sided and abrupt. The 
                         parameters incremental resistance, series and parallel 
                         resistances, and ideality factor obtained from the current-voltage 
                         I-V characteristics and the detectivity D* exhibited a large 
                         fluctuation among the photodiodes. In spite of these fluctuations, 
                         it was possible to correlate the noise and D* values to the 
                         parameters obtained from the I-V analysis. These results allow 
                         predicting the PbTe detectors figures of merit from the data 
                         obtained from the I-V curves. The best PbTe photodiodes fabricated 
                         here showed D* values close to 1011 cm Hz1/2 W\−1, 
                         comparable to InSb and HgCdTe commercial detectors and to PbTe 
                         sensors fabricated on Si substrates.",
           copyholder = "SID/SCD",
                 issn = "0021-8979",
             language = "en",
           targetfile = "barros ti electrical.pdf",
        urlaccessdate = "03 maio 2024"
}